基于激子理论的硅基位错环发光器件模型参数的计算

Calculation of Model Parameters of Dislocation-Rich Silicon Emitting Device Based on Exciton Theory

针对硅基位错环发光器件,根据激子理论的速率方程描述了发光二极管的光电特性,提出了一种模型参数的计算方法,建立了便于计算机仿真的HSPICE模型.计算的参数与已报道的实验基本一致,特别是理想系数大于2,束缚激子的热激活能级为6.3 meV,自由激子复合概率和束缚激子分裂概率的比为0.006等参数比较符合物理事实.并得到了束缚激子和自由激子的发光强度与温度和注入电流的相互关系.结果表明激子在位错环发光器件中具有重要作用.

A modeling method for dislocation-rich silicon emitting device was presented based on exciton theory. Considering a rate-equation of exciton theory, the photoelectric behavior of diodes was described. Then a way to calculate model parameters was presented, and an HSPICE model which was easy to be emulated was provided. The calculated parameters are in agreement with the reported experimental data, especially when the ideality factor is greater than 2, the thermal activation energy of bound excitons is 6.3 meV, and the proportion between the recombination possibility of free excitons and separation possibility of bound excitons is 0.006. In addition, variation of optical intensity of free and bound excitons with temperature and injection current was found. The results proved the importance of excitons in dislocation-rich silicon emitting device.