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p-GaN与Ni/Pt欧姆接触的研究 被引量：1

Study of Ni/Pt Ohmic Contacts to P-type GaN
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摘要 本文对p-GaN与Ni/Pt形成欧姆接触及其电流传输机制进行了研究。I-V变温测试曲线是线形的,表明Ni/Pt与p-GaN之所以能形成欧姆接触,是因为Ni/Pt与p-GaN接触在空气中退火时界面处的p-GaN空穴浓度增加了,从而降低了有效势垒高度。在148K～323K范围内,单位接触电阻R_c随测试温度T的升高趋于呈指数下降,表明Ni/Pt与p-GaN欧姆接触的电流传输机制遵循热电子发射。 In this paper, the formation and current transmission mechanisms of Ni/Pt Ohmic contacts to p-type GaN are investigated. The linear I-V curves indicate that the formation of the Ohmic contact between the Ni/Pt and the GaN is attributed to the decrease of the effective barrier height with the increase of the hole concentration at the interface of p-type GaN contacts with the Ni/Pt when annealing in air. In the range from 148K to 323K, the specific contact resistance Rc is decreased exponentially with the test temperature T. This indicates that the current transmission mechanism of the Ni/Pt Ohmic contacts to the p-type GaN abides by the thermionic emmission theory.
作者 成彩晶 张向锋 丁嘉欣
机构地区 中国空空导弹研究院光电所
出处 《红外》 CAS 2008年第3期16-19,共4页 Infrared
关键词 欧姆接触 单位接触电阻 I-V曲线 变温测试 电流传输机制 Ohmic contact specific contact resistance I-V curves various temperature measurement current transmission mechanism
分类号 TN304 [电子电信—物理电子学]
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参考文献10

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二级参考文献10

  • 1Gotz W, Johnson N M, Walker J, et al. Activation of acceptors in Mg-doped GaN grown by motalorganic chemical vapor deposition [J]. Appl. Phys. Lett,68, 667, 1996.
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  • 4Jin-Kuo Ho, Charng-Shyang Jong, Chien C Chiu.Low-resistance ohmic contacts to p-type GaN [J].Appl. Phys. Lett, 74, 1275, 1999.
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  • 6Jong Kyu Kim, Jong-Lam Lee, Jae Won Lee, et al.Low resistance Pd/Au ohmic contacts to p-type GaNusing surface treatment [J]. Appl. Phys. Lett, 73,2953, 1998.
  • 7Ja-Soon Jang, In-Sik Chang, Han-Ki Kim, et al.Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN [J]. Appl. Phys. Lett, 74, 70, 1999.
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同被引文献39

  • 1S Pookpauratana, R France, M. Bar, et al. Intermixing and chemical structure at the interface between n-GaN and V-based contacts [J]. Applied Physics Letters, 2008, 93(17): 2106-2108.
  • 2C F Lin, H C Cheng, G C Chi. W ohmic contact for highly doped n-type GaN films [J]. Solid-State Electronics, 2000, 44(4): 757-760.
  • 3Jong-Larn Lee, Jong Kyu Kim, Marc H Weber, et al. [J]. Applied Physics Letters, 2001, 78(26): 4142- 4144.
  • 4Z M Zhao, R L Jiang, P Chen, et al. Ti/A1/Pt/Au and A1 ohmic contacts on Si-substrated GaN [J]. Applied Physics Letters, 2001, 79(2): 218-220.
  • 5S Noor Mohammad. Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN [J]. Journal of Applied Physics, 2004, 95(12): 7940- 7953.
  • 6C Y Kim, S W Kim, C H Hong, et al. Effects of titanium silicide on AuSiTi/n-GaN ohmic contact systems [J]. Journal of Crystal Growth, 1998 (189/190): 720-724.
  • 7Dae-Woo Kim, Hong Koo Baik. Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN [J]. Applied Physics Letters, 2000, 77(7): 1011-1103.
  • 8Hyunsoo Kim, Jae-Hyun Ryou, Russell D Dupuis, et al. Electrical characteristics of contacts to thin film N-polar n-type GaN [J]. Applied Physics Letters, 2008, 93(19): 2106-2108.
  • 9Hyunsoo Kim, Sung-Nam Lee, Yongjo Park, et al. Metallization contacts to nonpolar a-plane n-type GaN [J]. Applied Physics Letters, 2008, 93(3): 2105- 2107.
  • 10T Jang, S N Lee, O H Nam, et al. Investigation of Pd/Ti/AI and Ti/A1 Ohmic contact materials on Gaface and N-face surfaces of n-type GaN [J]. Applied Physics Letters, 2006, 88(19): 3505-3507.

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红外
2008年 第3期

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