PLD法制备PbSe薄膜的性能分析

Properties of PbSe Thin Films by PLD

通过脉冲激光沉积(PLD)法在Si(111)和SiO2玻璃基片上制备了PbSe薄膜。X射线衍射、X射线能谱、原子力显微镜、傅里叶变换红外光谱仪测试结果表明:所有制备的薄膜都为多晶薄膜,发现薄膜生长温度对薄膜衍射峰有一定影响;PLD法制备的薄膜的成分与靶材的基本一致,实现了同组分沉积;所有薄膜表面比较平滑,表面不平整度小于200nm,结构比较致密;PbSe薄膜对红外光具有敏感的响应特性;在波长为5μm处存在有明显的吸收边,此吸收边对应于直接带隙PbSe材料的禁带宽度;对应于波长小于5μm的红外光,PbSe薄膜存在有明显的强吸收。

PbSe thin films were prepared on Si （ 111 ） and SiO2 substrates using pulsed laser deposition （PLD） technique in order to investigate the properties of the films. XRD, X-ray EDS analysis, AFM and Fourier transform infrared spectroscopy were employed to characterize PbSe thin films. The results show that all of the films were heteromorphy and the growth temperature has effect to the diffract peaks of the films. The contents of PbSe thin films by PLD consisted with the targets, and realizing thin films deposited with same constitutes; the films had rather flatness surface and compact structure; the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm;they had sensitivity to light of a specified wavelength and obvious absorption edge at 5μm corresponding to band-gap width of PbSe thin films;light of wavelength less than 5μm was strongly absorbed.