基于SWB环境下的nm级NMOS虚拟优化

Virtual Optimization of Nano-Level NMOS Based on the SWB Environment

介绍了Synopsys Inc.推出的新一代(第五代)nm级TCAD仿真平台--Sentaurus Work-bench(SWB)的系统结构、基本功能及其优化功能,重点介绍了SWB的DOE及RSM优化机制。基于SWB环境实现了nm级NMOS集成化管芯的可制造性设计及优化。在对NMOS集成化管芯的设计过程中,围绕Vt进行了可制造性设计,利用DOE试验方法和RSM对Vt进行了优化,得到了阈值电压(Vt)和调阈值注入剂量(Vt_Dose)、能量(Vt_Energy)及抑制穿通注入剂量(PNCH_Dose)、能量(PNCH_Energy)之间的RSM响应表面关系。在此基础上,分析了Vt各影响因素与Vt之间的关系,从而指导了在Vt的设计过程中各个主要影响参数的选取。

The system structure, basic and optimized function of the new （5th） generation TCAD simulation platform Sentaurus Workbench （SWB） mechanisms of SWB were presented emphatically. were introduced. The DOE and RSM optimization Based on the SWB environment, the design for manufacturing and optimization of the nano-level NMOS integrated chips were implemented. In the design of NMOS integrated chip, V, was optimized by using the DOE and RSM around the design for manufacturing of V1. The RSM response surface relationship of V, and Vt_Dose, Vt_Energy, PNCH_Dose, PNCH_Energy were obtained. The relationship between V, and the factors which impact the V, were analyzed. The chooses of the major influencing factors during designing V, were guided.