摘要
采用高温固相法制备了Sr2SiO4:Dy3+发光材料.在365nm紫外光激发下,测得Sr2SiO4:Dy3+材料的发射光谱为一个多峰宽谱,主峰分别为486,575和665nm;监测575nm的发射峰,所得材料的激发光谱为一个多峰宽谱,主峰分别为331,361,371,397,435,461和478nm.研究了Dy3+掺杂浓度对Sr2SiO4:Dy3+材料发射光谱强度的影响.研究结果显示,随着Dy3+浓度的增大,黄、蓝发射峰比值(Y/B)也逐渐增大;随着Dy3+浓度的增大,575nm发射峰强度先增大后减小.加入电荷补偿剂Li+,Na+和K+均提高了Sr2SiO4:Dy3+材料的发射光谱强度,其中以Li+的情况最为明显.
The Sr2SiO4:Dy^3+ phosphor was synthesized by high temperature solid-state method. The emission spectrum of Sr2SiO4:Dy^3+ shows several bands at 486, 575 and 665 nm under the 365 nm excitation. The excitation spectrum for 575 nm emission has several excitation bands at 331, 361, 371, 397, 435, 461 and 478 nm. The effect of Dy^3+ concentration on the emission spectrum intensity of Sr2SiO4:Dy^3+was investigated, the result shows that the ratio(Y/B) of yellow emission(575 nm) to blue emission(486 nm) increases with increasing Dy^3+ concentration, the 575 nm yellow emission intensity firstly increases with increasing Dy^3+ concentration, then decreases. With the condition of immitting the charge compensation, the emission spectrum intensity of Sr2SiO4:Dy^3+ is enhanced, and the effect is most distinctly with immitting Li^+ .
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第3期457-460,共4页
Chemical Journal of Chinese Universities
基金
河北省科学技术发展基金(批准号:51215103b)
河北大学青年基金(批准号:2006Q06)资助