Measurement of GaAs start duration in different solution concentration using infrared images

This paper proposes a new infrared method to measure the start duration of GaAs substrate in chemi- cal etching. When etching starts, the temperature of liquid-film will change because of heat release in the chemical reaction. As a result, the start duration of GaAs can be tested by collecting real-time in- frared thermal images in the course of temperature variation. Both theoretical analysis and experi- mental results show that the line shape liquid film of a 2-mm width is a good monitoring subject. By making use of the grey distribution change of a certain cross section of the line shape liquid film, the start duration of reaction between GaAs and H2SO4-H2O2-H2O is obtained. The start durations of reac- tion between GaAs substrate and H2SO4:H2O2:H2O (=5:1:50 and 15:3:50) solution are about 0.2 s and 0.3―0.4 s, respectively. This result and relative method will impulse the research of wet chemical etching technology of GaAs and so on.

This paper proposes a new infrared method to measure the start duration of GaAs substrate in chemical etching. When etching starts, the temperature of liquid-film will change because of heat release in the chemical reaction. As a result, the start duration of GaAs can be tested by collecting real-time in-frared thermal images in the course of temperature variation. Both theoretical analysis and experi-mental results show that the line shape liquid film of a 2-mm width is a good monitoring subject. By making use of the grey distribution change of a certain cross section of the line shape liquid film, the start duration of reaction between GaAs and H2SO4-H202-H20 is obtained. The start durations of reac-tion between GaAs substrate and H2SO4： H202： H20 （=5：1：50 and 15：3：50） solution are about 0.2 s and 0.3-0.4 s, respectively. This result and relative method will impulse the research of wet chemical etching technology of GaAs and so on.