磁性隧道结自旋极化电子的隧穿特性

Spin-polarized Electrons Tunneling Through Magnetic Junctions

铁磁金属间通过中间层的自旋极化电子隧穿产生的磁性耦合,在自旋电子器件中有许多潜在的应用.考虑由一平面磁性势垒层隔开的两铁磁性金属电极构成的磁性隧道结,针对中间层形成的矩形势垒,在近自由电子模型的基础上,计算零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,分析势垒层特性、分子场强弱、分子场相对取向等对隧道结自旋极化电子隧穿特性的影响.计算结果对自旋电子器件的设计具有一定的指导意义.

For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ferromagnetic metal structure, tunneling conductance, spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasi-free electron model. The impact of potential barrier, molecular field strength and molecular field orientation, etc. on tunneling of electrons is analyzed. It exhibits useful instructions for the design of spin electronic devices.