摘要
利用双靶共溅法在玻璃衬底上沉积了Zr掺杂ITO薄膜,对比研究了在不同氧流量下ITO和ITO∶Zr薄膜性能的变化。Zr的掺入促进薄膜晶化的同时也导致了(400)晶面取向的加强,ITO∶Zr比ITO薄膜具有较低的表面粗糙度。氧流量的上升降低了方阻和载流子浓度,ITO∶Zr薄膜具有更高的载流子浓度。一定范围的氧流量可以改善薄膜的可见光透过率,但过量的氧却使得薄膜的光学性能变差。通过直接跃迁的模型得出ITO∶Zr比ITO薄膜具有更宽的光学禁带。共溅法制备的ITO∶Zr薄膜比ITO薄膜表现出更好的光电性能。
Zirconium-doped ITO films were deposited on glass substrate by co-sputtering technology with two targets. Properties of ITO and ITO ： Zr films deposited at different oxygen flow rates were contrastively studied. Zr-doping leads to better crystalline structure and strengthens the orientation of （400） plane. ITO ： Zr films have lower roughness than ITO films. The increase in oxygen flow rate reduces sheet resistance and carrier concentration. ITO ： Zr films show higher carrier concentration. The certain oxygen flow rates can improve the visible light transmittance of the films, but excessive oxygen can worsen the optical properties. The direct transition model shows wider optical band gap of ITO ： Zr films than that of ITO films. ITO： Zr films prepared by co-sputtering exhibite better optical-electrical properties than ITO films.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第1期64-67,共4页
Semiconductor Optoelectronics
基金
上海应用材料基金项目(0525)
关键词
ITO薄膜
锆
磁控溅射
氧流量
ITO films
zirconium
magnetron sputtering
oxygen flow rate
