期刊文献+

两种方法制备WO_3-UHMWPE复合材料的非线性电学行为比较 被引量:1

Comparison of the Electrical Characteristic of Two Kinds of WO_3-UHMWPE Composites
下载PDF
导出
摘要 采用电子陶瓷工艺,在较低烧结温度(150~300℃)下,利用微米级颗粒WO3与纳米级颗粒WO3制备了两种WO3与超高分子量聚乙烯(UHMWPE)复合材料。测试了两种样品的I-V特性。结果表明,微米颗粒制备的样品的非线性系数最高达95.2,纳米颗粒制备的样品非线性系数较小。对样品做了SEM和XRD分析,XRD显示微米颗粒制备的复合材料中,单斜相与三斜相共存,纳米颗粒制备的复合材料以三斜相为主,单斜相不明显。 Two kinds of WO3-UHMWPE composites, which the sizes of starting-WO3 grain are respectively micron and nanometer, were prepared by conventional electronic ceramic process at lower temperature(150--300℃). The I-V characteristics of these two kinds of composites were measured. The highest nonlinear coefficient of the sample Ⅰ arrives at 95.2, while the sample Ⅱ has very small nonlinear coefficient. SEM and XRD analysis has been carried out on these composites. XRD results show that there are two phases (triclinic and monoclinic) sample series Ⅰ, while only one phase (triclinic) in sample series Ⅱ.
出处 《电工材料》 CAS 2008年第1期17-20,共4页 Electrical Engineering Materials
关键词 三氧化钨(WO3) 超高分子量聚乙烯(UHMWPE) 复合材料 非线性电学行为 相共存 WO3-UHMWPE composites nonlinear electrical property phase coexisting
  • 相关文献

参考文献8

  • 1[1]Makarov V,Trontelj M.Novel Varistor Material Based on Tungsten Oxide[J].Mater.Sci.Lett,1994(13):937-939.
  • 2[2]Wang Y,Yang X S,Yao K L.et al.Current-voltage Characteristics and Grain Growth of Li2CO3-doped-Tungsten Trioxide Ceramics[J].Materials Research Bulletin,2004,39:1459-1467.
  • 3羊新胜,王豫,董亮.三氧化钨基低压电容–压敏电阻及其稳定性研究[J].电子元件与材料,2003,22(9):22-23. 被引量:3
  • 4扎卡利亚,王豫,姚凯伦.新型低压WO_3基压敏电阻掺杂及制备条件研究[J].功能材料,1999,30(3):299-301. 被引量:10
  • 5[5]Wang Y,Yao K L,Liu Z L.Novel.Nonlinear Currentvoltage Characteristics of Sinter Tungsten Oxide[J].Mater.Sci.Lett,2001,20:1741-1743.
  • 6[6]Wang Y,Aburas Z,Yao K L,et al.Effects of Doping and Temperature on Nonlinearity of WO3 Varistor[J].Mater.Chem.Phys.1999,58:51-54.
  • 7[7]Hirose T,Structure Phase Transitions and Semiconductor-Metal Transition in WO3[J].Phys.Soc.Jpn.1980,49(2):562-567.
  • 8[8]Wang Y,Yang X S,Liu Z.L.et al.Varistor Effect of WO3-based Ceramics at High Temperatures[J].Material Letter,2004,58(6):1017-1021.

二级参考文献16

  • 1张卫,武明堂,刘辅宜.TiO_2电容、压敏复合功能材料研究[J].功能材料,1994,25(2):137-141. 被引量:6
  • 2张卫,武明堂,刘辅宜.TiO_2低压压敏陶瓷材料研究[J].传感器技术,1995,14(2):13-16. 被引量:4
  • 3王文生.多功能SrTiO_3压敏电阻器及其应用[J].电子元件与材料,1996,15(6):7-13. 被引量:11
  • 4羊新胜 王豫 陈敏 等.三氧化钨多晶陶瓷的非线性电学特性[J].材料科学与工艺,2001,9:649-651.
  • 5Li C P, Wang J E Wang X S, et al. Nonlinear electrical properties of Ta-doped titania capacitor-varistor ceramics[J]. Mater Chem Phys, 2002,74: 187-191.
  • 6Pianaro S A, Bueno P R, Longo E, et ed. Microstructure and electric of a SnO2 based varistor[J]. Ceram Int, 1999, 25: I-6.
  • 7Sawada S,Danielson G C. Electrical coaduction in crystals and ceramicst of WO3[J]. Phys Ray, 1959, 113: 803-805.
  • 8Makarov V, Trontelj M. Novel varistor material based on tungsten oxide[J]. J Mater Sci Lett, 1994,13: 937-939.
  • 9Wang Y, Aburas Z, Yao K L, et al. Effects of doping and temperature on nonlinearity of WO3 varistor[J]. Mater Chem Phys, 1999, 58: 51-54.
  • 10Makarov V, Trontelj M. Effect of Al2O3 on the microstmcture and electrical properties of WO3-based varistor ceramics[J]. J Eur Ceram Soc,2000, 20: 747-749.

共引文献10

同被引文献7

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部