摘要
采用磁控溅射方法制备CoxAg100-x颗粒膜,研究了其巨磁电阻(GMR)效应。结果表明,GMR效应的大小是颗粒膜厚度的函数。在0.9T外磁场下,当玻璃衬底上制备态Co33.8Ag66.2颗粒膜的膜厚为100nm时,其GMR效应值达到最大值(-18.2%),且GMR值随退火温度的上升而单调减小。
CoxAg100-x granular films were grown on the substrates of glass using the magnetron sputting system. It was found that at room temperature the greatness magnetoresistance (GMR) value of the as-deposited CoxAg10-x granular film was as large as 18.2% under an applied magnetic field of 0.9 T and GMR value decreased monotonously with increasing annealing temperature in vacuum. The GMR value of Co-Ag granular films as a function of thickness have a maximum value while the film thickness is 100 nm.
出处
《电工材料》
CAS
2008年第1期21-24,共4页
Electrical Engineering Materials
基金
广西自然科学基金资助项目(桂科基0575093)