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BESⅢ晶体量能器累积剂量检测系统电子学设计

Design of Readout Electronics for BESⅢCrystal Calorimeter Integrated Dose Monitoring System
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摘要 为了在线测量北京谱仪BESⅢ中的量能器所受到的辐射累积剂量,设计了BESⅢ量能器累积剂量检测系统。讨论了几种RADFET受照电路的优缺点,介绍了RADFET读出电路,并详细叙述了系统电子学的设计及其性能。 BESⅢ crystal calorimeter integrated dose monitoring system has been designed in order to measure the integrated close near BESⅢ crystal calorimeter. The advantages and disadvantages of several radiation circuits are discussed at first. RADFET readout circuit for one RADFET ehannel is then introduced. The design and performance of system electronics are finally illustrated in detail.
出处 《核电子学与探测技术》 CAS CSCD 北大核心 2007年第6期1030-1034,共5页 Nuclear Electronics & Detection Technology
关键词 BESⅢ RADEFT剂量计 开端电压 恒流源 MCF5282 BESⅢ RADFET dosimeter threshold voltage constant current source MCF5282
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参考文献4

  • 1A. Holmes-Siedle and L. Adams, Radiat[J]. Phys. Chem. 1986, (28) :235-244.
  • 2A. Jaksic et al. , Dose Rate Dependence of RADFET Irradiation and Post-Irradiation Responses, PROC[J]. 241h INTERNATIONAL CONFERENCE ON MICROELECTRONICS. 2004, (2).
  • 3B. Camanzi et al. , The BABAR RadFET monitoring board[J], IEEE Trans. Nucl. Sci 2002, (44), 3 : 1275-1280.
  • 4Freescale Semiconductor Inc. , MCF5282 ColdFire Microcontroller Users Manual, January 2004.

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