摘要
我们用1 064nm脉冲激光在硅表面加工出小孔结构,再作高温退火处理形成硅氧化纳米结构,发现该结构在692和694nm波长处有很强的光致受激发光(PL).通过进一步实验发现:该PL发光有明显的阈值表现和光泵线性增强效应,证明该PL发光确实是光致受激辐射.我们提出氧化界面态模型来解释光致受激发光机理,在氧化界面态与价带顶空穴态之间形成粒子数反转.这项工作为硅基上发光器件的光电子集成研发开辟了新的途经.
Stimulated emission has been observed from some oxide structure of silicon when optically excited by radiation of 514nm laser. A sharp peak at 694nm and another one at 692nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and linear transition of emission intensity as a function of pump power in larger range. The oxide structure was fabricated by laser irradiation and annealing treatment of silicon. A model for explaining the stimulated emission is proposed in which the trap states of the interface between some oxide of silicon and porous nanocrystal play an important role.
出处
《贵州科学》
2008年第1期1-5,共5页
Guizhou Science
基金
国家自然科学基金资助项目
关键词
激光辐照
受激发光
氧化
硅界面态
laser irradiation, stimulated emission, oxide structure of silicon, interface state
