CoSi2薄膜与Si(001)界面的高分辨电子显微镜观察

High-resolution electron microscopy observations on CoSi_2/Si (001) interface

利用高分辨透射电镜研究了经过550℃退火处理的共溅射CoSi2非晶结构薄膜与Si基体的界面。结果表明,550℃退火后薄膜已经发生晶化转变;同时CoSi2薄膜与Si基体发生反应扩散,在界面上生成了形状规则的CoSi2化合物,并与Si基体保持着相同的位向关系或孪晶位向关系。结合以上电镜观察,对这些界面化合物的生长机制进行了讨论。

The interface of CoSi2 thin film on the Si substrate prepared by magnetron sputtering and annealed at 550℃ was studied by highresolution electron microscopy （HREM）. The results showed that the amorphous CoSi2 thin film already changed into crystalline structure after annealing at 550℃ At the same time, the reactive diffusion took place between the CoSi2 thin film and Si substrate to form new CoSi2 compounds on the interface during annealing. The interracial CoSi2 compounds were of regular shape and kept the same or twinned orientation relationship with the Si substrate. Based on HREM observations, the mechanism of growth of interracial CoSi2 compound was discussed additionally.