基于ICP的金属钛深刻蚀

Bulk Titanium Deep Etching Based on ICP

MEMS应用领域的扩展要求开发硅材料之外其他新型材料的三维微细加工技术.为此,对金属钛这一新型MEMS体材料的三维加工进行了探索.金属钛不仅延展性和导电性好,且断裂韧度高、高低温特性以及生物兼容性好.采用电感耦合等离子体源(inductively coupled plasma,ICP)技术对金属钛进行三维深刻蚀,采用不同刻蚀掩模、氯基刻蚀气体,研究了线圈功率、平板功率和Cl2流量对刻蚀速率和选择比等工艺参数的影响,并对Ti深刻蚀参数进行了优化,得到0.91μm/min的刻蚀速率,可实现光滑表面和陡直侧壁.

As MEMS expands into new applications, additional materials other than silicon are being pursued as mechanical structures for mierosystem, in which titanium outstands for its inherent duetibility and conductivity, high fracture toughness, good temperature characteristics and excellent bio-eompatibility. Inductively coupled plasma（ICP） deep etching process of bulk titanium was studied in this paper. Several masking materials were explored, while Cl2 was employed as etching agent. The effects of process parameters, e.g. coil power, platen power, Cl2 flow rate and chamber pressure, on etching rate and selectivity were investigated. With the optimized process parameters, an etching rate of 0.91 μm/min was achieved with high aspect ratio and smooth surface.