掺杂对钽丝电性能影响的研究

Study on effect of doping on electric property of tantalum wire

通过显微组织观察、直流漏电流测试,研究了掺杂元素种类(A、B两类)及其掺杂量在不同退火温度下对钽丝微观组织以及直流漏电流的影响。结果表明:随着掺杂量的增加,钽丝的再结晶温度升高,组织晶粒细化,其中掺B比掺A细化效果更加明显;掺A和B的钽丝比仅掺A的钽丝或纯钽丝直流漏电流性能要好,且掺400×10-6(质量分数)的A与掺400×10-6的A、400×10-6的B钽丝的直流漏电流数值在同类钽丝中最低,可达到约0.007×10-6A·cm-2。

Effect of different dopants and various dopants quantity at different annealing temperatures on microstructure and direct current leakage of tantalum wire were investigated through observation of microstructure and testing of direct current leakage of tantalum wire. The results show that the recrystallization temperature of tantalum wire increases and the grain size of texture can be reduced with the increment of dopants quantity. The effect of dopant B on reduction of the grain is more obvious than that of dopant A. The direct current leakage of tantalum wire doped with A and B is lower than that of tantalum wire doped A or pure one. The direct current leakage of tantalum wire doped with A 400×10^-6 （mass fraction） and doped with A 400×10^-6 and B 400×10^-6 is the lowest in the respective kind of tantalum wire （0.007×10^-6A·cm^-2）.