摘要
用脉冲电弧离子镀技术,通过调整掺硅石墨靶和纯石墨靶的数量,制备了一系列不同硅含量的类金刚石薄膜样品.研究发现:当硅含量达6.7at.%时,类金刚石薄膜的应力从4.5GPa降低到3.1GPa,薄膜的硬度还保持在3600Hv,和没有掺杂的类金刚石薄膜的硬度相比,基本保持不变;当硅含量小于6.7at.%时薄膜的摩擦系数相对于未掺杂的类金刚石薄膜也保持不变,为0.15.当薄膜中硅含量继续增加时,薄膜中C—Si键的含量增多,导致薄膜硬度和应力都有较大幅度地减小、摩擦系数增大、磨损性能也变差了.
A series of samples with different Si concentration were prepared by adjusting the numbers of Si-doped graphite targets and pure graphite targets. It was found that the stress in the thin films decreased from 4.5 GPa to 3.1 GPa when the Si concentration reached 6.7at. %, but the hardness kept constant at about 3600 Hv, almost the same as of un-doped thin films, and the friction coefficient of thin films kept constant at about 0.15. As the Si concentration in the thin film kept on increasing, the concentration of C-Si bond will increase, leading to the decrease of hardness and stress and the increase of friction coefficient.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第3期1935-1940,共6页
Acta Physica Sinica