摘要
建立了PIN二极管的Pspice子电路模型和热模型,模拟了PIN限幅器的瞬态特性。应用FOR-TRAN语言调用Pspice的仿真数据,计算了PIN二极管结温随输入脉冲变化的情况,讨论了PIN二极管的物理参数与温度的关系,结合结温的升高修改了Pspice软件中PIN二极管的子电路模型参数,模拟得到了不同结温下的瞬态响应曲线以及尖峰泄漏功率与脉冲频率、上升沿、结温的关系。模拟结果表明:输入脉冲的幅度越大,结温增长越快;在不同脉冲频率和上升沿情况下,升高的结温会导致限幅器尖峰泄漏功率增大。
A Pspice subcircuit model has been proposed for PIN diode to study the PIN limiter, the electro-thermal diode model including temperature dependences of physical parameters is also described. The relationship between junction temperature and time for input pulse is calculated by FORTRAN with the output data of Pspice code. By tuning a small set of model parameters under different junction temperature, the transient response of PIN diode limiter have been simulated with Pspice, and spike leakage power varying with frequency, pulse rising time ,and temperature are obtained. Results indicate that bigger pulse amplitude causes quicker juction temperature grow and spike leakage power will be augmented by the junction temperature rise under different frequency and pulse rising time.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2008年第2期277-280,共4页
High Power Laser and Particle Beams
基金
国家自然科学基金资助课题(60471045)
