摘要
随着IC制造技术的飞速发展,为了增加IC芯片产量和降低单元制造成本,硅片直径趋向大直径化,原有的传统研磨工艺已不适应大直径硅片的加工,人们开始研究用硅片自旋转表面磨削方法来代替传统的研磨方法。通过实验的方法,对切割后的硅片表面进行磨削,获得了较理想的表面效果,达到了减少抛光去除量和抛光时间的目的。
With the fast development of IC manufacturing technology, the diameter of silicon wafers trends to be larger in order to increase the yields of chips and reduce the cost per bit. The traditional craft of grinding is already unsuitable to the large diameter silicon wafers, thus replaced by surface grinding. In this paper, we have studied surface grinding of slicing wafers by experiment where a better surface status is obtained and the polishing remove and time are reduced.
出处
《中国电子科学研究院学报》
2008年第2期212-215,共4页
Journal of China Academy of Electronics and Information Technology
关键词
硅片
磨削
砂轮
silicon wafer
grinding
grinding wheel
