从SiBONC陶瓷粉体中生长β-SiC纳米线

Growth of β-SiC Nanowires from SiBONC Nano Powder Compacts

通过有机聚合物先驱体法使用四氯化硅（SiCl4）、苯甲醛（PhCHO）、烷基胺（RNH2）、三氯化硼（BCl3）为原料，通过有机-无机裂解转化制备了SiBONC陶瓷的纳米粉体。在对SiBONC陶瓷粉末坯体进行高温气压处理时，发现在坯体表面生长出大量β-SiC纳米线。通过XRD、FT-IR、SEM、TEM等分析测试手段分析了该纳米线的微观结构和物相组成，并初步推断了其生长机制。结果表明：该纳米线为结晶良好的β-SiC，其主要组成元素为Si、C及少量的O；其直径在20～200nm之间，其平均长度在1mm左右。

SiC nanowires were found in crystallochemical analysis of SiBONC ceramic powder, which was synthesized through a polymer pyrolysis route from the raw materials of tetrachloride, phenyle aldehyde, boron trichloride and aniline. And then annealed in graphite crucible in gas pressure furnace, the β-SiC nanowires were found above the compacts. X-ray diffraction （XRD）, FT-IR, scanning electron microscopy, transmission electron microscopy were employed for analysis of the as-annealed specimen. The SiC nanowires were consisting of three elements Si, C and O, and the SiC phases were fine crystallized. The diameter of the nanowires is about 20-200 nm, we find a new route for fabrication of β-SiC nanowires, the nanowires have been observed and to make a conjecture of mechanism for these wires growth.