摘要
通过有机聚合物先驱体法使用四氯化硅(SiCl4)、苯甲醛(PhCHO)、烷基胺(RNH2)、三氯化硼(BCl3)为原料,通过有机-无机裂解转化制备了SiBONC陶瓷的纳米粉体。在对SiBONC陶瓷粉末坯体进行高温气压处理时,发现在坯体表面生长出大量β-SiC纳米线。通过XRD、FT-IR、SEM、TEM等分析测试手段分析了该纳米线的微观结构和物相组成,并初步推断了其生长机制。结果表明:该纳米线为结晶良好的β-SiC,其主要组成元素为Si、C及少量的O;其直径在20~200nm之间,其平均长度在1mm左右。
SiC nanowires were found in crystallochemical analysis of SiBONC ceramic powder, which was synthesized through a polymer pyrolysis route from the raw materials of tetrachloride, phenyle aldehyde, boron trichloride and aniline. And then annealed in graphite crucible in gas pressure furnace, the β-SiC nanowires were found above the compacts. X-ray diffraction (XRD), FT-IR, scanning electron microscopy, transmission electron microscopy were employed for analysis of the as-annealed specimen. The SiC nanowires were consisting of three elements Si, C and O, and the SiC phases were fine crystallized. The diameter of the nanowires is about 20-200 nm, we find a new route for fabrication of β-SiC nanowires, the nanowires have been observed and to make a conjecture of mechanism for these wires growth.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2008年第3期561-564,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金资助项目(50472011)