摘要
全面分析了CMOS带隙基准的主要非理想因素,给出了相应的补偿方法,并以此为基础设计了一种高精度的带隙基准源电路。该电路在SMIC 0.35μm CMOS工艺条件下的后仿真结果表明,基准输出电压的温度系数为3.4 ppm/℃(-40^+125℃),电源抑制比为85 dB。此带隙基准源已应用于14位D/A转换器芯片中,并参加了MPW流片,该D/A转换芯片已经通过测试。
All the major non - ideal factors in CMOS bandgap reference and the ideal compensation techniques are proposed. According to the analysis, a precise bandgap reference based on SMIC 0.35μm CMOS technology had been designed and post - layout simulation shows that the temperature coefficient of the reference is 3. 4 ppm/℃ over -40～125℃ and the supply rejection ratio is 85 dB for 3.3 V supply. The proposed bandgap circuit had been applied to a 14 bit D/A converter and the D/A converter had past the test.
出处
《现代电子技术》
2008年第7期89-91,96,共4页
Modern Electronics Technique
基金
国家部委预研项目资助
关键词
CMOS
带隙基准
温度补偿
失调电压
CMOS
bandgap reference
temperature compensation
offset voltage
