砂轮粒径对300mm Si片双面磨削影响的研究

Effect of the Grain Size of Grinding Wheel on 300 mm Si Wafer Grinding

在直径300mm Si片制备过程中,利用双面磨削技术能获得高精度的表面参数,但同时却会在Si片表面留下明显的磨削印痕,这会影响Si片表面平整度。通过选择#2000和#3000砂轮对Si片进行磨削实验,获得两种型号砂轮磨削出Si片的形貌图、磨削印痕和局部平整度,并分别进行了比较。结果表明,选择粒度更细的#3000砂轮能够有效地弱化Si片表面的磨削印痕,同时改善边缘局部平整度差的问题,从而提高Si磨削片表面的局部平整度。

Using double-side grinding technology in 300 mm Si wafer manufacturing process, the Si wafer can obtain high accuracy surface parameters, and generate obvious grinding marks, which can affect the surface flatness. Comparing the experiments between # 2000 and # 3000 wheels, the surface morphology, grinding marks and SFQR （site front least square range） were obtained. The results show that the experiments, using the # 3000 wheels, can fine the grinding marks of Si wafer surface, and simultaneously reduce the SFQR on the edge of ground wafer.