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射频E类功率放大器并联电容技术研究 被引量：2

Research on Shunt Capacitance for Class-E RF Power Amplifier
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摘要 为了使E类放大器工作效率最大,需要得到并联电容的确切数值。分析了含线性并联电容E类放大器的和含非线性晶体管寄生输出电容E类放大器的不同特性,给出了不同的设计方法。指出了E类功率放大器设计过程中分析和计算并联电容的难点,阐述了E类功率放大器中并联电容对电路性能的影响,同时给出了考虑并联电容的E类功率放大器的设计方法。 In order to get the highest working efficiency of Class-E amplifier, it needs to get the exact values of shunt capacitance. The different characteristics of Class-E power amplifiers with linear shunt capacitance or with transistor nonlinear parasitic output capacitance were analyzed, and different designs were given. The analysis and calculating issues for shunt capacitance in design were pointed out. The effect of shunt capacitance on the circuit properties was discussed, and the design method of Class-E RF power amplifier with shunt capacitance was given.
作者 甘军宁 张万荣 谢红云 何莉剑 李佳 沈珮
机构地区 北京工业大学电子信息与控制工程学院
出处 《半导体技术》 CAS CSCD 北大核心 2008年第4期333-335,359,共4页 Semiconductor Technology
基金 国家自然科学基金项目(60776051 60376033) 北京市教委科技发展计划项目(KM200710005015) 北京工业大学青年科研基金(97002013200701) 北京市属市管高校中青年骨干教师培养计划项目(102(KB)-00856) 北京市优秀跨世纪人才基金项目(67002013200301) 北京市自然科学基金项目(4082007)
关键词 射频功率放大器 E类 并联电容 RF power amplifier Class-E shunt capacitance
分类号 TN722.75 [电子电信—电路与系统]
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参考文献12

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同被引文献13

  • 1郝新慧,纪学军.微带线E类功率放大器的设计与实现[J].无线电通信技术,2007,33(3):39-41. 被引量：3
  • 2HIROTAKA K,TADASHI S,MOTOKI F. Class DE high-efficiency tuned power amplifier[J].IEEE Transactions on Circuits and Systems,1996,(01):51-60.
  • 3SHINODA K,SUETSUGU T,MATSUO M. Idealized operation of the class DE amplifier and frequency multipliers[J].IEEE Transactions on Circuits and Systems,1998,(01):34-40.
  • 4MIHAI A. An exact analysis of class-DE amplifier at any output Q[J].IEEE Transactions on Circuits and Systems,1999,(10):242-248.
  • 5SEKIYA H,WATANABE T,SUETSUGU T. Analysis and design of class DE amplifier with nonlinear shunt capacitances[J].IEEE Transactions on Circuits and Systems,2009,(10):2362-2371.
  • 6TADASHI S,MARIAN K K. Comparison of Class-E amplifier with nonlinear and linear shunt capacitance[J].IEEE Transactions on Circuits and Systems,2003,(08):1089-1097.
  • 7Coffie R, Chen Y, Smorchkova I P, et al. Temperature and voltage dependent RF degradation study in AIGaN/GaN HEMTs [ C ]// IEEE international reliability physics sympo- sium. Phoenix, USA : IEEE, 2007 : 568- 569.
  • 8Darwish A M, Bayba A, Hung H A. Thermal resistance cal- culation of A1GaN/GaN on SiC devices [J]. IEEE Transac- tion on Microwave Theory and Techniques, 2004,52 ( 11 ) : 2039 - 2042.
  • 9Pengelly R S,Wood S M, Milligan J W, et al. A review ofGaN on SiC high electron-mobility power transistors and MMICs[J]. IEEE Transaction on Microwave Theory and Techniques,2012,60(6) : 1764-1783.
  • 10Trew R J, Green D S, Shealy J B. A1GaN/GaN HFET relia- bility[J]. IEEE Microwave Magazine, 2009,10(4):116- 127.

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半导体技术
2008年 第4期

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