摘要
研究了硅片在富硝酸的HF/HNO_3/H_2O体系中的腐蚀规律。随着腐蚀反应的进行,反应分5个阶段,在开始的5min内硅片腐蚀量较大,然后反应速度经历了下降、上升、下降再迅速下降的过程,最终达到稳定阶段。另外,随着反应时间的延长,反应温度先上升到达最大值,然后逐渐下降,溶液中氟离子浓度不断减小,反应速度随时间的变化规律是腐蚀生成热、体系与外界热交换以及溶液中氟离子浓度共同作用的结果。
The silicon etching process in the HF/HNO3/H2O system with abundant HNO3 has been studied. Since the etching rate and the reaction temperature are changing along with the time passed, the process could be divided into five stages. During the whole process, the concentration of F^- in the solution decreases gradually. The results of variation of the etching rate showed that there are factors-the heat generated, the concentration of the F^- , and the heat exchange between the system and the environment.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2008年第3期319-323,共5页
Acta Energiae Solaris Sinica
基金
上海市科委项目(03DZ12028)
关键词
硅腐蚀
反直速度
温度
silicon etching
reaction rate
temperature
