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利用一种简单方法制备的高质量的p型ZnO薄膜及其性质 被引量：1

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摘要 利用化学气相沉积法(chemical vapor deposition,CVD),以Zn4(OH)2(O2CCH3)6.2H2O为固相源、ZnNO3为掺杂源制备出p型ZnO:N薄膜,采用XRD,霍耳效应和PL谱对薄膜进行分析,研究了衬底温度对膜结构、电学性质和光致发光特性的影响.结果表明,生长温度较低时,薄膜呈p型导电特性且电阻率随衬底温度的升高而下降,衬底温度为400℃时,载流子浓度达到+5.127×1017cm3?,电阻率为0.04706?.cm,迁移率为259cm2/(V.s),并且一个月后的测试表明薄膜仍呈p型导电特性.当衬底温度过高时薄膜从p型导电转为n型.
作者 毛飞燕 邓宏 戴丽萍 陈金菊 袁兆林 李燕
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室 电子科技大学物理电子学院
出处 《科学通报》 EI CAS CSCD 北大核心 2008年第6期623-626,共4页 Chinese Science Bulletin
基金 成都市科技攻关项目(编号:07GGYB572GX) 预研项目(编号:ZJ0508) 电子薄膜与集成器件国家重点实验室开放基金项目(批准号:L08010301JX0615)资助
关键词 化学气相沉积法 ZnO:N薄膜 P型 迁移率 载流子浓度
分类号 O484 [理学—固体物理]
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参考文献18

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共引文献9

同被引文献55

  • 1王楠,孔春阳,朱仁江,秦国平,戴特力,南貌,阮海波.p型ZnO薄膜的制备及特性[J].物理学报,2007,56(10):5974-5978. 被引量：11
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科学通报
2008年 第6期

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