带有ESD保护,900MHz/2.4GHz Dual-Band CMOS LNA的设计(英文)

ESD-Protected,900 MHz/2.4 GHz Dual-Band CMOS LNA Design

设计了一个可以同时工作在900 MHz和2 .4 GHz的双频带(Dual-Band)低噪声放大器(LNA)。相对于使用并行(parallel)结构LNA的双频带解决方案,同时工作(concurrent)结构的双频带LNA更能节省面积和减少功耗。此LNA在900MHz和2 .4 GHz两频带同时提供窄带增益和良好匹配。该双频带LNA使用TSMC 0 .25μm1P5 M RF CMOS工艺。工作在900 MHz时,电压增益、噪声系数(Noise Figure)分别是21 dB、2 .9 dB;工作在2 .4 GHz时,电压增益、噪声系数分别是25dB、2 .8 dB,在电源电压为2 .5 V时,该LNA的功耗为12 .5 mW,面积为1 .1 mm×0 .9 mm。使用新颖的静电防护(ESD)结构使得在外围PAD上的保护二极管面积仅为8μm×8μm时,静电防护能力可达2 kV(人体模型)

An ESD-protected, CMOS, Dual-Band 900 MHz/2. 4 GHz LNA is designed that is capable of simultaneous operation at two different frequency bands. The use of a concurrent topology enables saving important die area and power consumption compared to the parallel solution that employs two separated LNAs. The LNA provides narrow-band gain and matching at 900MHz and 2. 4 GHz bands, simultaneously. It was implemented in TSMC 0. 25μm, 1P5M, RF CMOS process. At 900 MHz, the measured voltage gain and noise figure are 21 dB and 2.9 dB,respectively. At 2.4 GHz, the measured voltage gain and noise figure are 25 dB and 2.8 dB, respectively. The LNA consumes 12.5 mW from a 2. 5 V supply, and the LNA die area is 1. 1 mm×0. 9 mm. The LNA uses a novel ESD structure where the area of protective diodes is only 8μm× 8μm, and the ESD protection level of the LNA is over 2 kV （Human Body Model）.