SiC埋层的制备及其红外吸收特性

PREPARATION AND INFRARED ABSORPTION PROPERTIES OF BURIED SiC LAYERS

采用ｍｅｔａｌｖａｐｏｒｖａｃｕｕｍａｒｃ离子源的离子束合成方法，对单晶Ｓｉ衬底注入Ｃ＋离子，获得不同剂量下的ＳｉＣ埋层．Ｃ＋离子束的引出电压为５０ｋＶ，注入的剂量为３０×１０１７—１６×１０１８ｃｍ－２．通过红外吸收谱的测试和分析，表明ＳｉＣ埋层的结晶程度依赖于剂量的大小．研究证实，可以在较低的平均衬底温度下（低于４００℃）得到含立方相结构的ＳｉＣ埋层．

Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source,with C + ions implanted into Si substrates under different doses.In the present study, the extracted voltage was 50kV and the ion dose was varied from 3 0×10 17 to 1 6×10 18 cm -2 .According to infrared absorption measurements,it was found that the structure of the buried SiC layers depended on the ion dose.Moreover,the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400℃ with the MEVVA ion source.