FTIR确定碲镉汞晶片的组分与截止波长

DETERMINATION OF COMPOSITION AND CUT OFF WAVELENGTH FOR HgCdTe BY FTIR MEASUREMENT

采用傅立叶变换红外（ＦＴＩＲ）透射的方法测量了碲镉汞晶片在不同厚度下的透射曲线，运用经验公式确定了其组分及８０Ｋ时的截止波长，并同实测的响应光谱得到的截止波长进行了比较，结果表明，采用该方法预测的截止波长同实际的截止波长相对偏差为２．５％，从而为碲镉汞器件制备工艺中材料的筛选、提高投片的准确率提供了重要的参考依据．

The transmission curves of HgCdTe wafers with different thicknesses were measured by FTIR. Its composition and cut off wavelength at 80K were determined by using the empirical formula. The actual cut off wavelengths were measured and obtained from their spectral responses. The result shows that the relative deviation between predicted cut off wavelength and actual one is 2.5%. Therefore, this method can provide one of the most important parameters for material selection of HgCdTe for device manufacture.