浅ZnCdSe/ZnSe量子阱的光泵受激发射

STIMULATED EMISSION OF SHALLOW ZnCdSe/ZnSe SINGLE QUANTUM WELL

本文主要研究浅ＺｎＣｄＳｅ／ＺｎＳｅ单量子阱在７７Ｋ温度下的光致发光．在不同激发密度下，讨论了该结构的发光机制，把７７Ｋ温度下的受激发射归结为是激子－激子散射所引起的．

Photoluminescence of shallow Zn 0.92 Cd 0.08 Se/ZnSe single quantum well grown by LP MOCVD was measured for different excitation intensity at 77 K . The spontaneous spectra show two emission peaks at 451.5 nm and 452.9 nm respectively. Compared to stimulated emission spectra, we can see that the stimulated emission came from the high energy emission peak in spontaneous emission spectra. The origin of the stimulated emission was attributed to exciton exciton process in the sample.