摘要
本文从理论上分析计算并给出了应变多量子阱激光器阱数与腔长的优化设计结果.考虑到多生子阱阱区的注入不均匀性,提出了一种新的分析和计算方法.以1.55μmInGaAs(P)1.5%压缩应变多量子阱激光器为例,最佳的阱数为4个,最佳腔长为500μm左右.
The 0ptimum design 0f well number and cavity length f0r strained multip l e-quantum-welllasers are presented. Taking the non-hom0geneity of injection carriers and optical field into account,anew method and calculation way are also provided. To take the commonly-used l. 5% compressivelyInGaAs (P)strained MQW lasers for example,the optimum number of wells is four,and the optimumlasers's cavity length is about 500μm. -
出处
《光子学报》
EI
CAS
CSCD
1997年第7期604-608,共5页
Acta Photonica Sinica