纳米金刚石表面准原子层沉积硅镀层

Silicon quasi atomic layer deposition on nanodiamond

采用准原子层沉积(Quasi Atomic Layer Deposition-QALD)技术在纳米金刚石表面沉积硅镀层。通过硅烷气体在纳米金刚石颗粒表面饱和吸附,然后原位热解的分步反应实现了硅镀层对纳米金刚石的完整包覆。实验使用TEM、XRD、FTIR和TGA-DSC等分析方法研究了镀硅纳米金刚石的形貌、结构、表面吸附状态和热稳定性。结果表明,SiH4气体循环吸附-热解的QALD方法可在纳米金刚石颗粒表面形成均匀连续、厚度可控的硅镀层。热解反应温度为600℃时,硅镀层为立方相。纳米金刚石镀硅后,热稳定性显著提高,温度升高到1000℃也没有明显的氧化反应发生。

Quasi Atomic Layer Deposition （QALD） technology has been used to coat nanodiamond with silicon in this paper. Uniform silicon films with controllable thickness on nanodiamonds were obtained through the sequential reaction of SiH4-saturated adsorption and in-situ pyrogenation. TEM, XRD, FTIR and TGA-DSC were utilized to investigate the morphology, structure, surface adsorption and thermal stability of Sicoated nanodiamonds. The results confirm that even and continuous nano-scale silicon films could be successfully deposited on nanodiamonds by cycled SiH4 adsorptionpyrogenation. The structure of the obtained silicon film was cubic phase at the reaction temperature of 600℃. The thermal stability of nanodiamonds was improved by silicon coating and no significant oxidation occurred before 1000℃.