摘要
本文研究了ECR－PECVD制备的Si3N4薄膜的光学特性．得到的Si3N4薄膜具有光致发光效应，在280℃沉积制备的Si3N4薄膜的光致发光波长为400nm，具有较好的单色性．测试分析了Si3N4薄膜对可见光、红外光具有较高的透射性能，Si3N4薄膜可作为红外光的增速减反射膜．
In this paper,the optical properties of Si3N4 thin film prepared by ECR－PECVD has beenstudied. The photoluminescence effect of Si3 N4 thin film has been obtained. When depositiontemperature is 280℃，the photolumicescence wavelength of Si,N, thin film prepared by ECR－PECVD is400nm and has fine monochromaticity. The transmittance of Si3N4 thin film on infrared (IR ) andvisible light has been measured and analysed,Si,N, thin film can be used as IR antireflex film.
出处
《光子学报》
EI
CAS
CSCD
1997年第9期836-840,共5页
Acta Photonica Sinica
基金
广东省博士后基金
关键词
PECVD
薄膜
光致发光
增透膜
氮化硅
ECR－PECVD
Si_3N_4 thin film
Photoluminescence effect
Antireflex film
