摘要
叙述了采用氩离子束刻蚀的方法制作线列长方形拱面石英微透镜阵列.所制单元石英微透镜底部的外形尺寸为(300×106)um2,平均冠高7.07μm,平均曲率半径202.19μm,平均焦距404.38μm,平均F2数为3.82,平均光焦度2.47×103屈光度,扫描电子显微镜和表面探针测试表明,所制线列石英微透镜阵列的图形整齐均匀,单元长方形拱面石英微透镜的轮廓清晰,表面光滑平整.所制微透镜阵列用于高Tc超导红外探测器阵列的实验证实,微透镜的引入可以显著改善超导探测器的光响应特性.
A technique for preparing a linear rectangular arch microlens array on a quartz substrate bymeans of Ar ion beam etching using a thermally deformed positive acting photoresit layer as an etchingmask has been investigated. The SiO2 microlens fabricated has the mean curvature radius of 202. 19μm,the mean thickness of 7. 0 7 μm, the mean bottom size of (3 00 ×106 ) μm2, the mean focallengthof 404. 38μm,the mean F2 number of 3. 82,and the mean refracting power diopter of 2. 47 ×103. Thescanning electron microscope and the surface stylus measurement show that the pattern of the SiO2microlens array prepared is regular and well - distributed. The optical performance of IRsuperconducting detectors was improved by SiO2 microlens array fabricated.
出处
《光子学报》
EI
CAS
CSCD
1997年第8期710-714,共5页
Acta Photonica Sinica
关键词
氩离子束刻蚀
石英微透镜阵列
红外探测器
Ion beam etching
Quartz microlens array
Performance of superconducting detectors