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阴极真空弧离子源的研制 被引量:1

Development of Cathode Vacuum Arc Ion Source
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摘要 为发展金属离子束材料表面改性技术的工业应用,北师大低能核物理所研制成阴极真空弧离子源和离子注入装置.简要介绍该设备的结构、原理和性能. The cathode vacuum arc ion source and ion implantation facility have been developed in our institute for industrial application of surface modification of materials. In this paper the principle structure and performance of these facilities were described.
出处 《原子核物理评论》 CAS CSCD 1997年第3期164-166,共3页 Nuclear Physics Review
基金 国家"863"计划
关键词 真空弧放电 MEVVA 离子源 离子注入 表面改性 cathode vacuum MEVVA ion source ion implantation surface modification
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  • 1张蔡星,高技术通讯,1989年,1期,16页

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  • 2弥谦,樊超,舒朝濂.脉冲离子镀膜中的脉冲计数[J].西安工业学院学报,2005,25(1):28-31. 被引量:1
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  • 5Wu J, Chang J, Li M, et al. Characterization of dia- mond-llke carbon coatin8s prepared by pulsed bias ca- thodlc vacuum arc deposition [ J ]. Thin Solid Films, 2007,516(2-4) :243 -247.
  • 6Bendavid A, Martin P. J, Preston E W. The effect of pulsed direct current substrate bias on the properties of tltanitum dioxide thin films deposited by filtered ca- thodic vacuum arc deposition [J]. Thin Solid Films, 2008,517(2) :494 -499.
  • 7Anders S, Callahan D L, Pharr M, et al. Multilayers of amorphous carbon prepared by cathodic arc deposition [ J ]. Surface and Coatings Technology, 1997,94 - 95 : 189 - 194.
  • 8Hsieh W J, Shih P S, Lin J H, et al. Characterization and formation of nanocrystalline diamonds in a-C/N films by filtered cathodic vacuum arc plasma[ J]. Thin Solid Films ,2004,469 - 470 : 120 - 126.
  • 9Rother B, Mucha A. Effects of plasma ion implantation from cathodic arc plasmas [ J ]. Surface and Coatings Technology,2001,142 - 144:402 - 405.
  • 10Olbrieh W, Fessmann J, Kampsehulte G, et al. Im- proved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [ J ]. Surface and Coatings Technology, 1991,49 ( 1 - 3 ) :258 - 262.

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