增长反场装置位形维持时间的实验研究

ELECTRON ENERGY DISTRIBUTION IN A NITROGEN ECR PLASMA

在预电离、空芯变压器功率续流、真空室放电清洗、碳化和蒸钛条件下，得到反场箍缩（ＲＦＰ）和超低安全因子（ＵＬＱ）的实验结果。等离子体性质改善，等离子体电流出现平顶，其幅值增加。杂质被有效控制，等离子体温度增高。

In order to provide more active nitrogen for GaN film growth at low temperature, the electron energy distribution of a nitrogen ECR plasma has been investigated by using a Langmuir probe and the second differential theory on cavity coupled ECR plasma applicator for semiconductor processing. It was found that with more energetic electrons in presence, the distributions were all non Maxwellians in which the high energy fraction would increase with decreasing of the pressure and increasing of the absorbed microwave power.