摘要
为了对ＧａＮ薄膜低温生长提供更多的活性氮，在一个腔耦合电子回旋共振（ＥＣＲ）半导体加工装置上，用朗谬探针和二次微分理论，研究了氮ＥＣＲ等离子体的实际电子能量分布。发现它们都是非麦克斯韦分布，含有高能电子，而且随着放电气压的下降和微波功率的增加，高能电子成分增加。
In this paper, the influence of first wall materials on the impurity fluence and impurity distribution in the SOL at the beginning of the HL 1M tokamak operation has been studied and compared with that of the HL 1 tokamak. The radial distribution of heat flux was measured with a heat flux probe in both the HL 1 and the HL 1M tokamak plasma SOL, and characteristic change of the edge plasma flow was measured by a Mach probe system in the HL 1M tokamak at different operation modes.
出处
《核聚变与等离子体物理》
CAS
CSCD
北大核心
1997年第3期45-50,共6页
Nuclear Fusion and Plasma Physics
基金
国家自然科学基金
