Al掺杂ZnO薄膜的结构和热电性质研究

Microstructure and thermoelectric properties of Al-doped ZnO thin films

用直流反应磁控溅射方法在透明平面玻璃上制备出Al掺杂ZnO薄膜,并对其结构和温差电动势率进行研究。实验结果表明,所制备样品具有C轴择优取向的多晶结构,温差电动势随着温差(ΔT)的增大而呈线性增加。并且样品的电阻越大,温差电动势率越小。在室温附近的环境温度对温差电动势率几乎无影响。退火处理后,温差电动势率增大。实验还发现,在外加磁场时,温差电动势率稍微减小。

Al-doped ZnO （AZO） thin films were deposited on the TEP （thermoelictric power） transparent plane glass by DC reactive magnetron sputtering. The microstructure and thermoelectric power （TEP） of AZO thin films were studied. It was found that the films are polycrystalline with preferred orientation along the C-axis perpendicular to substrate surface. The thermal EMF linearly increases with increasing temperature difference （AT）, and the higher resistance of samples, the lower the TEP. The effect of ambient temerature （near room temperature） on TEP is few and the TEP increases after annealing treatment. The experimental results were also demonstrated that TEP decreases slightly in magnetic field.