射频功率对FN-DLC薄膜粘附性的影响

Effect of RF power on the adhesion property of FN-DLC films

利用射频等离子体增强化学气相沉积法,在单晶硅(100)晶面上制备了掺氮氟化类金刚石(FN-DLC)薄膜样品。用傅立叶变换吸收红外光谱(FTIR)、扫描电镜和金相显微镜分析了薄膜的组分和结构及表面形貌。红外分析表明,FN-DLC薄膜中主要有C-Fx(x=1,2,3)、C-C、C-H2、C-H3和C=C化学键等。功率增加时,薄膜内C-C、C=C键含量相对增加,F浓度的相对含量降低,薄膜的粘附性增强。

Fluoinated nitrogen-doped diamond-like carbon （FN-DLC） films were deposited on p-type （100） silicon wafers. Film composition and structure were analyzed by Fourier transform infrared （FTIR） absorption spectrometry. The surface morphology of films was characterized by scan electron microscopy （SEM）. Infrared spectra indicate the presence of C-Hx （x=1,2,3）, C-F, C-F2, C≡N, and C=CF2 groups in the films. The ratio of C-C to C-F concentration in the films increases with increasing power, and it can be affirmed that the film adhesion is enhanced with increasing RF power.