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直流磁控溅射电源研制及输出特性研究 被引量:7

Development and electrical response of power supply for DC magnetron sputtering
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摘要 磁控溅射技术在薄膜制备领域广泛应用,电源是磁控溅射镀膜的关键设备之一。本文介绍了全桥逆变直流磁控溅射电源主电路和控制电路的设计,该电源输出功率2 kW,采用PI恒流控制,具有过流保护。通过阻性负载测试表明电源具有很好恒流特性,在输出功率超过400 W时电源效率比较高。利用氮气/氩气不锈钢靶直流磁控溅射实际的等离子体负载测试表明:在保证真空室内压力不变的前提下,随着氮气比例的增加,电压下降,但电源恒流效果好,工作稳定。 Magnetron sputtering (MS) is currently being widely used in preparation of various thin films, where the power supply for MS is one of the crucial systems. The design of both the main circuit and control circuit of full-bridge inverter for dc MS power supply is presented. The ceiling power output of the system we developed is 2kW, of which the control is based on PI approach for constant current mode. The power supply is equipped with favorable over-current protection circuit. Experimental results showed that the power supply is featured by excellent constant current behavior and high efficiency with power output higher than 400W. The operation voltage of the system decreases with increasing nitrogen partial pressure during dc spttering from stainless steel target with argon-nitrogen mixture. In contrast, the operation current maintains constant in spite of the variation of operation voltage. The system runs very well under practical plasma load.
出处 《真空》 CAS 北大核心 2008年第2期70-73,共4页 Vacuum
关键词 磁控溅射 电源 全桥变换 恒流 magnetron sputtering power supply full-bridge inverter constant current
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  • 1卢红,梁任秋.IGBT驱动保护与应用技术[J].电力电子技术,1993,28(2):1-5. 被引量:17
  • 2徐东生.基于SG3525A的太阳能逆变电源设计[J].电子设计应用,2004(10):116-116. 被引量:3
  • 3董骐,范毓殿.非平衡磁控溅射及其应用[J].真空科学与技术,1996,16(1):51-57. 被引量:24
  • 4胡国玉,1994年
  • 5杜中义,1993年
  • 6徐德高,脉宽调制变换器型稳压电源,1983年
  • 7王正仕,硕士学位论文,1994年
  • 8On Semiconductor. Switchmode pulse width modulation control circuit[OB/EL]. http://onsemi. com, 2004 - 07-10.
  • 9Marin K. Kazimierczuk, Nandakumar Thirunarayan,Shan Wang. Analysis of Series - Parallel Resonant Converter[J]. IEEE Transactions on Aerospace and Electronic Systems, 1993,29(1) :88--99.
  • 10Fisher R A,et al. A 500kHz 250W DC/DC converter with multi-outputs controlled by phase shifted PWM and magnetic amplifiers. Proceedings of High Frequency Power Conversion. 1988:100~110.

共引文献52

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  • 1Munz W D. Properties of niobium-based wear and corrosion resistant-hard PVD coating deposition on various steels[J]. Metal Ital. 2002, 94(11/12): 25-27.
  • 2Gudmundsson J T. Ionized physical vapor deposition (IPVD): Magnetron sputtering discharges [J]. Journal of Physics. 2008, ( 100): 082002.
  • 3Kouznetsov V, Maca'k K, Schneider J M. A novel pulsed magnctron sputter technique utilizing very high target power densities [J]. Surface and Coatings Technology 1999, ( 122): 290-293.
  • 4Sittinger V, Ruske F, Werner W. High power pulsed magnetron sputtering of transparent conducting oxides [J]. Thin Solid Films. 2008, (516): 5847-5859
  • 5In J H, Seo S H, Chang H Y. A novel pulsing method for the enhancement of the deposition rate in high power pulsed magnetron sputtering [J]. Surface & Coatings Technology. 2008, (06): 141.
  • 6Boo J H, Jung M J, Park H K. High-rate deposition of copper thin films using newly designed high-power magnetron sputtering source [J]. Surface & Coatings Technology,2004, (188-189): 721-727.
  • 7Bohlmark J, Stbye O M, Lattemann M. Guiding the deposition flux in an ionized magnetron discharge[J]. Thin Sohd Films. 2006, (515): 1928-1931.
  • 8Konstantinidis S, Dauchot P. Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma [J]. Appl. Phys. Lett. 2006, (88): 021501.
  • 9Anders A, Andersson J. High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering [J]. Journal of Applied Physics. 2007, (102): 113303.
  • 10Gudmundsson J T. Ionization mechanism in the high power impulse magnetron sputtering (HiPIMS) discharge [J]. Journal of Physics. 2008, (100): 082013.

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