MFMIS铁电场效晶体管的制备及存储特性

Fabrication and Memory Characteristics of Ferroelectric Field Effect Transistors with MFMIS Structure

在磁控溅射法制备Pb(Zr0.52Ti0.48)O3(PZT)铁电薄膜的基础上,结合半导体工艺制备了金属/铁电/金属/绝缘层/Si衬底(MFMIS)结构的铁电场效应晶体管。器件的顺时针电容-电压(C-V)特性曲线和逆时针漏电流-栅电压(Id-Vg)特性曲线表明,n沟道PZT铁电场效应晶体管具有明显的栅极化调制效应和极化存储性能,且在-5^+5 V的电压下存储窗口为2 V。

The Metal/Ferroelectric/Metal/Insulator/Si substrates （MFMIS） field-effect-transistors （FFETs） were fabricated using the Pb（Zr0.52 Ti0.48 ）03 （PZT） thin film on p-Si substrates prepared by RF magnetron sputtering technique integrated with semiconductor technology. The clockwise capacitance-voltage（C-V） and the counterclockwise drain current-gate voltage （Id-Vg） hysterisis loop of the n channel PZT FFETs demonstrate that the channel current is modulated by the ferroelectric polarization of PZT films, and FFETs can realize a memory effect due to the ferroelectric polarization of PZT films. Memory widow of the FFETs is 2 V for a voltage swing between -5～ ＋5V.