摘要
以GP模型理论和工艺数据为基础,提出了模型中关键温度参数XTB和XTI的优化方法.以典型的带隙基准电路为例,经Hspice仿真分析表明,在-55～125℃范围内带隙基准的温度特性得到较好的改善.
Based on the theory of GP model and Process Data, a method of optimizing the key temperature parameters such as XTB and XTI is discussed in this paper, and it＇ s proved in a typical bandgap reference circuit with Hspice simulation which the temperature characteristic of bandgap reference can be improved ranging from - 55℃ to 125℃.
出处
《微电子学与计算机》
CSCD
北大核心
2008年第4期205-208,共4页
Microelectronics & Computer
