1Choi C H,Goo J S,Oh J Y,et al. MOS C-V characterization of ultrathin gate oxide thickness (1.3 -1.8nm). IEEE Electron Device Lett, 1999,20(6) : 292.
2Buchanan D A,Gusev E P,Cartier E,et al. 80nm poly-ailicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications. IEDM Technical Digest, 2000:223.
3Ragnarsson L A, Guha S, Bojarczuk N A, et al. Electrical characterization of AlzO3 n-channel MOSFETs with aluminum gates. IEEE Electron Device Lett,2001,22(10) :490.
4Guha S, Cartier E, Bojarczuk N A, et al. High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition. J Appl Phys,2001,90(1):512.
5Sze S M. Physics of semiconductor devices (second edition). John Wiley& Sons ,Inc, 1981.
6Wilk G D, Wallace R M, Anthony J M. High-k gate dielectrics:current status and materials properties considerations. J Appl Phys ,2001,89(10) :5243.
7Schuegraf K F,King C C,Hu C.Ultra-thin silicon dioxideleakage current and scaling limit.Symp VLSI Technol Dig Technol Papers,1992:18
8Choi C H,Oh K H,Goo J S,et al.Direct tunneling current model for circuit simulation.In:IEDM Tech Dig,1999,735
9Depas M,Vermeite B,Mertens P W,et al.Determination of tunneling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures.Solid-State Electron,1995,38:1465
10Lo S H,Buchanan D A,Taur Y,et al.Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs.IEEE Electron Device Lett,1997,18:209
