摘要
Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS)has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development.The research results were spoken highly at a panel meeting of experts held on 26 November,2007 in Beijing.
Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors （ISCAS） has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development. The research results were spoken highly at a panel meeting of experts held on 26 November, 2007 in Beijing.
