摘要
利用直流(DC)磁控溅射方法制备氢化非晶硅(a-Si∶H)薄膜。研究了氢气流量、溅射源功率对膜的沉积速率、氢含量(CH)以及光学性能的影响。通过傅里叶变换红外(FTIR)吸收光谱计算氢含量,其最大原子数分数为11%。用椭偏仪测量了膜的折射率n和消光系数k,发现a-Si∶H薄膜的k值和n值都随CH的增加而减小。将优化的实验结果用于半导体激光器腔面高反镜的镀制,a-Si∶H薄膜在808 nm波长处的n和k分别为3.2和8×10-3,获得了良好的激光输出特性。
Hydrogenated amorphous silicon （a-Si： H） thin films have been prepared by direct current （DC） magnetronsputtering. The effects of the hydrogen flow rate, sputtering power influencing on deposition rate and the optical characteristics of a-Si： H thin films have been investigated. The hydrogen content （（TH） of the films is calculated by Fourier transform infrared （FTIR） spectroscopy method, and the maximum （2H is obtained at 11% （atom percent）. The refractive index （n） and extinction coefficient （k） are measured by spectroscopic ellipsometer. It is found that the n and k of the prepared film decrease with the increase of CH. The optimizing parameters are applied to the preparation of high reflection mirror of diode lasers, and the 1l and k at 808 nm wavelength are 3.2 and 8 × 10^-3 respectively with a satisfactory laser output characteristics.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2008年第3期436-439,共4页
Chinese Journal of Lasers
基金
国家自然科学基金(60477010,60476026)资助项目
关键词
薄膜
氢化非晶硅
半导体激光器
椭偏仪
折射率
消光系数
thin films
a Si： H
semiconductor lasers
spectroscopic ellipsometer
refractive index
extinction coefficient
