锡掺杂的氧化铟透明导电膜的霍尔系数测量

HALL COEFFICIENT MEASUREMENT OF CONDUCTIVE AND TRANSPARENT INDIUM TIN OXIDE FILMS

采用直流辉光等离子体辅助反应蒸发法在玻璃基片上沉积了锡掺杂的氧化铟锡(ITO)透明导电膜,在沉积过程中保持了辉光放电电流、氧分压、氧流量、蒸发速率等工艺参数不变,而基片温度由室温变化到达300℃。用四探针法测量了膜的方法和用直流法测量了膜的霍尔系数,计算出膜的电阻率p、霍尔迁移率μ、载流子浓度n,从而研究了基片温度对膜的导电性能的影响。

The conductive and transparent Indium Tin Oxide films have been deposited on the glass substrates by using d. c. gas discharge plasma enhanced evaporation. In the experiments, the substrate temperatures have been changed from room temperature to 300 C as same as discharge current, Oxygen pressure and flow rate, evaporating rate. The effects of substrate temperarure on resistivity of the films have been studied with the measurement of Hall coefficient.