对接沟道 NMOS 结构杂质分布的二维数值模拟

Two Dimensional Numerical Simulation for Doping Profile in “Butt Joint” Channel NMOS Structure

针对ＶＤＭＯＳ－ＮＭＯＳ兼容集成结构建立了对接沟道ＮＭＯＳ晶体管工艺模型，根据其工艺模型，采用面向对象的Ｃ＋＋编程对对接沟道ＮＭＯＳ结构的杂质分布进行了二维数值模拟，给出了不同工艺条件下的模拟结果，并且进行了分析．结果表明，对接沟道ＮＭＯＳ结构能较好地实现ＶＤＭＯＳ与ｐ阱ＮＭＯＳ电路的兼容集成．

The two dimensional (2D) process model for the “Butt Joint” Channel NMOS (BJNMOS) structure is developed. With object oriented (OO) C ++ programming technique the 2D numerical simulation of doping profile in BJNMOS channel structure has been done. Simulation results for various process parameters are given. It is shown that p well NMOS ICs and VDMOS can be compatibly integrated on one chip with such a structure.