无平面结敏感区硅光二极管

THE PHOTODIODE OF SILICON WITHOUT SENSITIVE AREA IN THE PLANLAR PN JUNCTION

研制了在平面ＰＮ结内无敏感区的硅光探测器，测量了这种新结构器件的光电转换特性，说明在光照下，器件的光电流不为零值．

The photodetector of silicon without sensitive area in the planar junction has been researched. We measured the photoelectric character of the device. The mode for analysing the character of the device is presented in the work. Using parameters measured in the experiment, the effect sensitive area of the device and the diffusion length of the photogenerated minority carriers in the substrate can be determined.