纳米晶硅薄膜的量子尺寸效应研究

The Study of Quantum Size Effects on Nanocrystalline Silican Films

最近的一些研究指出，纳米晶硅薄膜具有量子点（ＱｕａｎｔｕｍＤｏｔ－Ｑ．Ｄ）特征。本文依据一些典型的理论模型，具体计算了纳米晶硅量子点（ｎｃ－Ｓｉ：ＨＱ．Ｄ）的量子化能级、激子的能量移动以及体系的库仑能量随纳米硅晶粒尺寸的变化，并结合我们自己，初步分析并讨论了这些能量参数对纳米晶硅量子点的共振隧穿、光致发光（ＰＬ）和库仑阻塞的影响。

Recently, the studies pointed out that the nc-Si:H films have characters of quantum dot. The change of quantum energy level, energy shift of exciton and Coulomb energy with quantum nanograins size are calculated based on typical theoritical models. Further, the effects of these energic parameners on resonant tunneling, and Coulomb blocade in association with our study are also discussed.