摘要
研制了一台具有二级透镜的聚焦离子束(FIB)装置。它利用液态金属离子源:镓和金硅合金。离子束束斑在0.3μm左右,最小束斑达0.21μm。能稳定、长时间地运行。文中论述了该系统的总体结构,对聚焦离子束系统的核心部件离子光学系统及辅助系统的参数选择、以及它们的结构特点作了详细的讨论,最后给出了系统的实验结果。并用离子束进行刻蚀工艺的研究,给出了FIB在镀了一层金膜的硅样品进行刻蚀的电子扫描显微镜照的图象。
The focused ion beam (FIB) system with two lens was devloped. Liquid metal Ga ion source and liquid alloy Au Si, Au Si Be ion source were used. The spot size of the FIB system was the order of 0.3 μm, the minimal spot size was 0.21 μm. The full plan of the FIB system was presented in this paper. The characters on ion optic system and some aid system and the selection of the parameters were presented. The experiment of the system was given. The photograph of the lithography on Si substrate with gold film was presented.
出处
《清华大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
1997年第10期57-60,共4页
Journal of Tsinghua University(Science and Technology)
基金
国家"八六三"高技术项目
关键词
聚焦离子束
刻蚀
半导体器件
液态金属离子源
focused ion beam (FIB)
ion optic system
liquid metal ion source
lithography