栅源距离对有机静电感应晶体管特性的影响

The influence of gate-drain distance on organic static induction transistor properties

用根据实际制作的有机静电感应晶体管(OSIT)建立物理模型,Matlab软件中的偏微分工具箱通过有限元法对有机静电感应晶体管特性进行解析,着重分析栅源距离对有机静电感应晶体管特性的影响,特别是沟道电势分布的影响.结果表明,调节栅源距离能有效控制沟道势垒高度,从而影响载流子的传输.

The physical model of organic static induction transistor（OSIT） was established according to actual OSIT product.The OSIT＇s properties were studied using finite element method offered by PDE tool box in Matlab.The influence of the gate-drain distance on OSIT performances was analyzed,especially the influence on the potential distribution along the channel.Results show that adjusting the gate-drain distance can control the barrier height along the channel effectively,so that the transmission of the carriers is affected.