小尺寸超高频双极晶体管工艺及特性模拟

Process and Characteristic Simulation of the Small-Scale Bipolar Transistor with Ultra-High Frequency

基于通信系统中射频电路设计的特殊要求,对小尺寸(基区宽度低于100nm)、超高频(特征频率高于15GHz)双极晶体管工艺制程和器件的物理特性进行了模拟,为工艺线流片进行可行性研究。该器件采用BiCMOS制程结构实现,在对小尺寸、超高频双极性器件物理模型进行详尽分析的基础上,实现了该器件工艺级(Sentaurus Process)及器件物理特性级(Sentaurus Device)的仿真,提出TCAD工艺及器件的一体化设计方案。模拟结果表明,在高频指标参数17GHz下,所得β值接近于80,满足设计要求。

Based on the special design requirements of high frequency circuits in communication systems, the simulations of the process flow and physical characteristics of small-scale （the base width is under 100 nm）, ultra-high frequency （the characteristic frequency is upon 15 GHz） bipolar transistors were simulated. It carried essential feasibility study for on-line process flow of the project. The device was usually implemented using BiCMOS fabricated structure. Based on the detailed analysis of physical models in small-scale and ultra-high frequency bipolar transistors, the process simulation （Sentaurus Process） and physical characteristic simulation （Sentaurus Device） of the transistors were realized. Finally, the whole design scheme of TCAD process and device was presented. The simulation results show that appropriate 13 （about 80） was obtained at the the parameter targets of high frequency （17 GHz） .